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英语翻译Our experiments were performed in a two-chamber MBE syst

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英语翻译
Our experiments were performed in a two-chamber MBE system,equipped with elemental sources of Zn,Cd and Se in the II-VI chamber and Ga and As in the III-V chamber.The growth process was continuously controlled by reflection high-energy electron diffraction (RHEED).The ZnSe-buffer layers of 45nm were grown on exactly (0 0 1) oriented GaAs substrates at a substrate temperature of about 3050C.The CdSe was grown at 2650C and 3400C,respectively.The transmission electron microscopy (TEM) investigations were performed with a Philips CM 200 FEG/ST microscope with an electron energy of 200 keV.The island density was analysed using plan-view samples.Conventional and high-resolution cross-section TEM combined with the chemical evaluation of lattice fringe images (CELFA) techniques [7,8]
were carried out to determine the Cd-distribution at the ZnSe-CdSe-ZnSe interface.The investigations of the optical gain have been performed in the edge geometry using a pulsed dye laser pumped by an excimer laser.The gain spectra were evaluated using the variable-stripe-length method [9].
多给几个作参考吧
google
我们的实验,在两院分子束外延系统,锌,镉,硒元素的来源在第二至第六室和Ga和As在III - V族室配备.不断的成长过程控制反射高能电子衍射(RHEED).45纳米的硒化锌缓冲层之成长,正是(0 0 1)面向砷化镓基板温度在基板约3050C.种植的硒化镉在2650C和3400C分别.透射电子显微镜(TEM)进行调查与飞利浦中医200护送队/意法半导体与电子能量为200千电子伏显微镜.岛上使用计划密度进行了分析,认为样品.常规和高清晰度截面透射电镜与晶格边缘图像(CELFA)化学评价相结合的技术[7,8]
yahoo宝贝鱼
我们的实验在一个两议院的MBE系统执行了,装备用锌、在II-VI房间和Ga的Cd和Se的自然力来源和在III-V房间.成长过程连续地是由反射高能的电子衍射(RHEED)控制的.45nm ZnSe缓冲层数在正确地增长(0 0 1)大约安置了GaAs基体在基体温度3050C.CdSe增长在2650C和3400C,分别.透射电镜术(TEM)调查进行了与与200 keV电子能量的一个Philips CM 200 FEG/ST显微镜.使用计划看法样品,海岛密度被分析了.常规和高分辨的短剖面TEM与格子边缘图象(CELFA)技术结合了[7,8的]化工评估
有道
我们的实验中产生的两院制勋章系统,配备元素来源的锌、Cd、硒的II-VI室和遗传算法与iii - v族室.不断增长的过程控制RHEED高能电子衍射(反思).这个ZnSe-buffer层45纳米种植在完全(0 0(1)在衬底材料以衬底温度约3050C.这个CdSe生长在2650C和3400C,分别.在透射电子显微镜(TEM)进行了调查与飞利浦厘米/圣FEG 200对一个电子显微镜的能量的200凯文不可能不.这个岛是用轻原子样品分析密度.传统的和高分辨率的截面TEM结合化学评价的边缘图像(CELFA网格技术[7、8]
嗯,貌似还是google的好些