英语翻译0.91 eV,1.09 eV and 1.21 eV for CdS,ZnS,CaS and SrS,resp

英语翻译
0.91 eV,1.09 eV and 1.21 eV for CdS,ZnS,CaS and SrS,respectively,Fig.11(b).These energy offsets are very large and well exceed the magnitude of thermal energy even at elevated
temperatures thereby resulting in strong scattering of conduction electrons.15,54 For the p-type PbS system,the situation is very different and far more interesting.The hole mobilities of the CdS containing
samples are the highest,Fig.11(a).Namely,the room temperature carrier mobility is \x02148 cm2 V\x031 s\x031 for the Pb0.975Na0.025S–3.0% CdS sample,much higher than \x02118 cm2 V\x031 s\x031,\x02115 cm2 V\x031 s\x031,and \x02111 cm2 V\x031 s\x031 for 3.0% ZnS,3.0% CaS,and 3.0% SrS containing samples (with a similar carrier concentration of 4.78 \x04 1019 cm\x033),respectively.The CdS nanocrystals in the PbS matrix do not appear to signifi-
cantly affect the hole scattering.The better alignment of energies of the valence band maxima between PbS and CdS (in the NaCl structure) can account for this.The electronic band structure calculations for PbS and the metal sulfides indicate valence band maxima (VBM) energy differences (with respect to the VBM of PbS) of 0.13 eV,0.16 eV,0.53 eV and 0.63 eV for CdS,ZnS,CaS and SrS respectively,15,54
see Fig.11(b).The minimum band offset is about 0.13 eV with the valence band maximum of PbS lying higher than that of CdS.The energy difference is even greater with the other metal
sulfides.

对于 CdS, ZnS, CaS 和SrS来说分别为 0.91eV,1.09 eV和1.21 eV,如图11（b）所示.这些能量偏移量非常大而且甚至在高温下大大超过热能的大小,从而导致传导电子很强的分散.[15,54] 对于p型PbS系统来说,情况大大不同,而...