英语翻译1.IntroductionThe IGBT has become the mainly used power

英语翻译
1.Introduction
The IGBT has become the mainly used power semiconductor device in modern power converter circuits in medium and high voltage applications.Even if these modules are designed to operate at relatively low frequency,typically < 5kHz,they produce high frequency oscillations which turn out from the interaction between the device,the driver and the converter circuit.These oscillations are recognized to be the main cause of EMI (Electro Magnetic Interference) emission and,in some circumstances,have been recognized to cause a significant reduction of the converter reliability [1].They can be mainly attributed to the IGBT internal capacitances and inductances stray elements [2] that,suitably stimulated,can resonate both internally to the module and with the external circuit [3,4].In particular it was found that the main stimulus to the electromagnetic noise emission is attributed to the voltage gradients [3].
In addition to these problems it was found [5] that IGBT devices can exhibit a significant voltage amplification at high frequency so that the problems of the oscillations can be further enhanced and because of this amplification the RF oscillations can become selfsustaining thus further reducing the reliability of the apparatus.Methods for minimizing RF oscillations of IGBT were presented in literature based on a careful design of PCB layout and gate driver [6].Moreover,the IGBT radio frequency amplification phenomena,can become relevant if the driver circuit generates high frequency conducted noise components,that can be transferred to the final stage and amplified,generating very high EMI levels.
In order to predict and reduce the EMI in power converter,it is very important to analyse the noise oscillations under different electrical IGBT module conditions that can be experienced during the normal device operations.For this reasons a model for high frequency behaviour of IGBT modules was presented [3],which however is not able to include their amplification effect.This effect was found to play a major role in causing electrical instabilities of the current sharing among the chips of the module [2].In this latter paper a small signal circuit model of IGBT devices was presented for single chip IGBTs.Data on analysis of single chips IGBT devices are also reported in [5].
The objective of this paper is to present an experimental study about the high frequency amplification observed in high voltage high current IGBT module as a function of the driving and power parameters.An original experimental set-up was constructed for studying the small signal behaviour of these modules in a single device commutation in order to reduce the power dissipation on the device.The experimental characterisation is intended to point out a complete high frequency low signal model of high power IGBT modules that includes the RF voltage amplification effects.

简介
IGBT模块已被广泛运用作中高电压整流器电路中的电力半导体设备.
即使这类模块被设计成低频率运作,典型的如