英语翻译Since the inception of the Internet,the communication ma
来源:学生作业帮 编辑:作业帮 分类:英语作业 时间:2024/05/30 01:11:47
英语翻译
Since the inception of the Internet,the communication market segment has seen an explosive growth.There is an increasing demand for bandwidth over the network due to a rapid increase in the number of users as well as the need for video/data communication.Such requirements have put stringent demands on the semiconductor technologies for providing adequate performance at reasonable cost.SiGe BiCMOS
technology provides a very elegant solution to address these market needs,for various reasons:1) high-speed heterojunction bipolar transistors (HBTs) provide fT,fMAX linearity (IP3),and noise figure(NFmin) comparable with more exotic HBTs like GaAs and InP;2) multiple variants of HBTs that are doped selectively to provide varying breakdown voltage requirements can be seamlessly integrated with state-of-the-art CMOS and high-quality passives;and 3) this technology provides higher yields and lower cost compared with other viable technologyoptions.It is not surprising,therefore,that the estimated worldwide SiGe market growth will exceed $1.0 billion by 2004.
IBM’s SiGe BiCMOS is now in its fourth lithographic generation since the introduction of the 0.5-μm generation into volume production.The key component of the device offering is the SiGe-based HBT whose performance(fT,fMAX) has been significantly improved to over 200 GHz in the 0.13-μm generation (see Fig.1).Wireless and storage applications continue to leverage the 0.5- and 0.25-μm generations where cost and time-to-market drive the technology choices.In contrast,
network communication space leads the 0.18- and 0.13-μm product applications where VLSI chips need substantial CMOS integration along with the high-performance SiGe HBT.
This paper reports IBM’s recent SiGe BiCMOS technology enhancements,such as high-speed HBT development,HBT modifications to address power amplifier (PA) application as well as low-cost wireless solutions,and high-performance passive element integration.Furthermore,we cover some key products and applications that these technologies have addressed.Finally,some insight is provided into the future
directions of SiGe BiCMOS technologies for addressing a myriad of applications.
Since the inception of the Internet,the communication market segment has seen an explosive growth.There is an increasing demand for bandwidth over the network due to a rapid increase in the number of users as well as the need for video/data communication.Such requirements have put stringent demands on the semiconductor technologies for providing adequate performance at reasonable cost.SiGe BiCMOS
technology provides a very elegant solution to address these market needs,for various reasons:1) high-speed heterojunction bipolar transistors (HBTs) provide fT,fMAX linearity (IP3),and noise figure(NFmin) comparable with more exotic HBTs like GaAs and InP;2) multiple variants of HBTs that are doped selectively to provide varying breakdown voltage requirements can be seamlessly integrated with state-of-the-art CMOS and high-quality passives;and 3) this technology provides higher yields and lower cost compared with other viable technologyoptions.It is not surprising,therefore,that the estimated worldwide SiGe market growth will exceed $1.0 billion by 2004.
IBM’s SiGe BiCMOS is now in its fourth lithographic generation since the introduction of the 0.5-μm generation into volume production.The key component of the device offering is the SiGe-based HBT whose performance(fT,fMAX) has been significantly improved to over 200 GHz in the 0.13-μm generation (see Fig.1).Wireless and storage applications continue to leverage the 0.5- and 0.25-μm generations where cost and time-to-market drive the technology choices.In contrast,
network communication space leads the 0.18- and 0.13-μm product applications where VLSI chips need substantial CMOS integration along with the high-performance SiGe HBT.
This paper reports IBM’s recent SiGe BiCMOS technology enhancements,such as high-speed HBT development,HBT modifications to address power amplifier (PA) application as well as low-cost wireless solutions,and high-performance passive element integration.Furthermore,we cover some key products and applications that these technologies have addressed.Finally,some insight is provided into the future
directions of SiGe BiCMOS technologies for addressing a myriad of applications.
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